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參數(shù)資料
| 型號： | BSS131Q62702-S565 |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶體管SOT23封裝貼片MOSFET的 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 54K |
| 代理商： | BSS131Q62702-S565 |
BSS138 Rev. A1
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V , DRAIN-SOURCE VOLTAGE (V)
I
D
4.5
4.0
3.5
3.0
2.5
V = 10V
GS
5.0
6.0
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
D
V = 10V
I = 220mA
R
D
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.7
0.8
0.9
1
1.1
1.2
G
I = 250μA
V = V
GS
V
t
0
0.5
1
1.5
2
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
V = 3.0V
R
D
4.0
4.5
10
5.0
6.0
3.5
0
5
10
I , DRAIN CURRENT (A)
15
20
25
30
0.5
1
1.5
2
2.5
D
J
25°C
-55°C
V = 10V
R
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
0.5
1
1.5
2
2.5
3
3.5
4
0
0.1
0.2
0.3
0.4
0.5
0.6
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
T = 25°C
125°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSS135 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
| BSS138 | 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSS138 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| BSS138 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| BSS138 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH50V0.22ASOT23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,50V,0.22A,SOT23 |
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