參數(shù)資料
型號: BSP30
廠商: DIOTEC SEMICONDUCTOR AG
英文描述: Surface mount Si-Epitaxial PlanarTransistors
中文描述: 表面貼裝硅外延PlanarTransistors
文件頁數(shù): 1/9頁
文件大?。?/td> 76K
代理商: BSP30
1999-09-22
Page 1
BSP308
Preliminary data
SIPMOS
Small-Signal-Transistor
Features
N-Channel
Enhancement mode
Logic Level
dvdt rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
V
DS
R
DS(on)
I
D
30
0.05
4.7
A
VPS05163
1
2
3
4
Type
BSP308
Package
SOT-223
Ordering Code
Q67000-S4011
Pin 1
G
Pin 2/4
D
PIN 3
S
Maximum Ratings
,at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current
T
A
= 25 °C
Reverse diode dvdt
I
S
= 4.7 A,
V
DS
= 20 V,
didt
= 200 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
A
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol
I
D
Unit
A
Value
4.7
3.9
I
D puls
18.8
dvdt
6
kV/μs
V
GS
P
tot
±20
1.8
V
W
T
j ,
T
stg
-55...+150
55/150/56
°C
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