參數(shù)資料
型號(hào)： BSP304
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： P-channel enhancement mode vertical D-MOS transistors(P溝道增強(qiáng)型垂直D-MOS晶體管)
中文描述： 170 mA, 300 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： PLASTIC, TO-92 VARIANT, 3 PIN
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 75K
代理商： BSP304
1995 Apr 07
2
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
FEATURES
Direct interface to C-MOS, TTL etc.
High speed switching
No secondary breakdown.
APPLICATIONS
Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
PINNING - TO-92 variant
PIN
SYMBOL
DESCRIPTION
BSP304
1
2
3
g
d
s
gate
drain
source
BSP304A
1
2
3
s
g
d
source
gate
drain
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM144
1
3
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
300
±
20
2.55
170
17
UNIT
V
DS
V
GSO
V
GSth
I
D
R
DSon
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
1.7
V
V
V
mA
open drain
I
D
=
1 mA; V
DS
= V
GS
I
D
=
170 mA;
V
GS
=
10 V
up to T
amb
= 25
°
C
P
tot
total power dissipation
1
W
相關(guān)PDF資料
PDF描述
BSP304A P-channel enhancement mode vertical D-MOS transistors(P溝道增強(qiáng)型垂直D-MOS晶體管)
BSP308 ?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ?
BSP30 MEDIUM POWER AMPLIFIER
BSP30 Surface mount Si-Epitaxial PlanarTransistors
BSP317Q67000-S94 TRANSISTOR MOSFET SMD SOT 223
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSP304A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:P-channel enhancement mode vertical D-MOS transistors
BSP304A AMO 功能描述:MOSFET VDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSP304A,126 功能描述:MOSFET VDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSP304T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 300V V(BR)DSS | 170MA I(D) | TO-92VAR
BSP308 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ?
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