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參數(shù)資料
| 型號(hào)： | BS817 |
| 廠商： | Diodes Inc. |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
| 中文描述： | P溝道增強(qiáng)型DMOS晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BS817 |
D
S
11401 Rev. D-3
1 of 2
BS817
BS817
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections (see Diagram)
Marking: S17
Weight: 0.008 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Notes:
1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm
2
area.
2. Pulse Test: Pulse width = 80μs, duty cycle = 1%.
High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
Ideal for Automated Surface Mount Assembly
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
-V
DSS
-V
DGS
V
GS
-I
D
Pd
T
j
, T
STG
Value
200
200
±20
100
310
-55 to +150
Unit
V
V
V
mA
mW
°C
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed) (Note 2)
Drain Current (continuous)
Power Dissipation @ T
C = 50°C (Note 1)
Operating and Storage Temperature Range
Characteristic
Symbol
I
F
Value
0.3
Unit
A
Max Forward Current (continuous)
Forward Voltage Drop (typical)
@ V
GS
= 0, I
F
= 0.3A, T
j
= 25°C
V
F
0.85
V
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.37
0.51
1.19
1.40
2.10
2.50
0.89
1.05
0.45
0.61
1.78
2.05
2.65
3.05
0.013
0.15
0.89
1.10
0.45
0.61
0.076
0.178
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