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參數(shù)資料
| 型號： | BS870 |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 63K |
| 代理商： | BS870 |
D
S
11302 Rev. G-2
1 of 2
BS870
BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
BS870
Units
Drain-Source Voltage
V
DSS
60
V
Drain-Gate Voltage R
GS
1.0M
V
DGR
60
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
I
D
250
mA
Total Power Dissipation (Note 1)
P
d
310
mW
Thermal Resistance, Junction to Ambient
R
JA
400
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: S70, K70
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.37
0.51
1.19
1.40
2.10
2.50
0.89
1.05
0.45
0.61
1.78
2.05
2.65
3.05
0.013
0.15
0.89
1.10
0.45
0.61
0.076
0.178
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
BV
DSS
I
DSS
I
GSS
60
80
V
μA
V
GS
= 0V, I
D
= 100 A
V
DS
= 25V, V
GS
= 0V
V
GS
= 15V, V
DS
= 0V
0.5
10
nA
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
1.0
2.0
3.5
1.0
3.0
5.0
0.5
V
V
DS
= V
GS
, I
D
=-250 A
V
GS
= 10V, I
D
= 0.2A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
A
80
mS
C
iss
C
oss
C
rss
22
11
2.0
50
25
5.0
pF
pF
pF
V
= 10V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
D(OFF)
2.0
5.0
20
20
ns
ns
V
ES
= 10V, R
L
= 150 ,
V
DS
= 10V, R
D
= 100
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS870/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 250MA I(D) | SOT-23 |
| BS870/E9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 250MA I(D) | SOT-23 |
| BS870\E9 | 功能描述:MOSFET USE 781-2N7002K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS870_ | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BS870_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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