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參數(shù)資料
| 型號(hào)： | BS829 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（P溝道）性（P通道的DMOS晶體管） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | BS829 |
FEATURES
DMOS Transistors (P-Channel)
Dimensions in inches and (millimeters)
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking
S29
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
SOT-23
4/98
BS829
Symbol
Value
Unit
Drain-Source Voltage
–V
DSS
–V
DGS
V
GS
–I
D
P
tot
T
j
T
S
400
V
Drain-Gate Voltage
400
V
Gate-Source Voltage (pulsed)
±20
V
Drain Current (continuous) at T
SB
= 50 °C
Power Dissipation at T
SB
= 50 °C
Junction Temperature
70
mA
350
1)
mW
150
°C
Storage Temperature Range
–65 to +150
°C
1)
Device on fiberglass substrate, see layout
Inverse Diode
Symbol
I
F
Value
350
Unit
mA
Max. Forward Current (continuous)
at T
amb
= 25 °C
Forward Voltage Drop (typ.)
at V
GS
= 0 V, I
F
= 350 mA, T
j
= 25 °C
V
F
1.0
V
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
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