參數(shù)資料
型號(hào)： BS850
廠商： Diodes Inc.
英文描述： P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
中文描述： P溝道增強(qiáng)型DMOS晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 70K
代理商： BS850
DS11402 Rev. F-3
1 of 3
BS850
BS850
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
High Input Impedance
Fast Switching Speed
CMOS Logic Compatible Input
No Thermal Runaway or Secondary
Breakdown
Surface Mount Package Ideally Suited
for Automatic Assembly
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202
Method 208
Pin Connection: See Diagram
Marking: S50
Weight: 0.008 grams (approx.)
Mechanical Data
Features
Characteristic
Symbol
–V
DSS
–V
DGS
V
GS
–I
D
P
d
T
j
, T
STG
Value
60
60
±20
250
310
-65 to+150
Unit
V
V
V
mA
mW
°C
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @T
C
= 25°C (Note 1)
Operating and Storage Temperature Range
Characteristic
Symbol
I
F
V
F
Value
0.30
0.85
Unit
A
V
Maximum Forward Current (continuous)
Forward Voltage Drop (typ.) @ V
GS
= 0, I
F
= 0.12A, T
j
= 25°C
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Notes:
1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm
2
area.
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.37
0.51
1.19
1.40
2.10
2.50
0.89
1.05
0.45
0.61
1.78
2.05
2.65
3.05
0.013
0.15
0.89
1.10
0.45
0.61
0.076
0.178
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