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參數(shù)資料
| 型號： | BS828 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（N溝道）（不適用通道的DMOS晶體管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 238K |
| 代理商： | BS828 |
FEATURES
DMOS Transistors (N-Channel)
Dimensions in inches and (millimeters)
.016 (0.4)
)
.037(0.95) .037(0.95)
m
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking
S28
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
SOT-23
4/98
Inverse Diode
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
240
V
Drain-Gate Voltage
V
DGS
240
V
Gate-Source Voltage (pulsed)
V
GS
± 20
V
Drain Current (continuous)
I
D
230
mA
Power Dissipation at T
SB
= 50 °C
P
tot
0.310
1)
W
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
S
–65 to +150
°C
1)
Device on fiberglass substrate, see layout
Symbol
Value
Unit
Max. Forward Current (continuous)
at T
amb
= 25 °C
I
F
0.3
A
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.3 A, T
j
= 25 °C
V
F
0.85
V
High breakdown voltage
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Specially suited for telephone subsets
BS828
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