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參數(shù)資料
| 型號： | BQ2060SS |
| 英文描述： | Silicon Bridge Rectifiers |
| 中文描述： | 集成電路表面貼裝，棉絮電荷監(jiān)視器 |
| 文件頁數(shù)： | 32/46頁 |
| 文件大?。?/td> | 364K |
| 代理商： | BQ2060SS |
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EEPROM Programming
The following sections describes the function of each
EEPROM location and howthe data is to be stored.
Fundamental Parameters
Sense Resistor Value
Two factors are used to scale the current related mea-
surements. The 16-bit
ADC Sense Resistor Gain
value
in EE 0x68–0x69 scales Current() to mA.
ADC Sense Resistor Gain
from its nominal value pro-
vides a method to calibrate the current readings for sys-
tem errors and the sense resistor value (R
S
) . The nomi-
nal value is set by
Adjusting
ADCSenseResistorGain
625
(Rs)
(4)
The 16-bit
VFC Sense Resistor Gain
in EE 0x6a–0x6b
scales each VFC interrupt to mAh.
VFC Sense Resistor
Gain
is based on the resistance of the series sense resis-
tor. The following formula computes a nominal or start-
ing value for
VFCSense Resistor Gain
from the sense re-
sistor value.
VFCSenseResistorGain
409.6
(Rs)
(5)
Sense resistor values are limited to the range of 0.00916
to 0.100
.
Digital Filter
The desired digital filter threshold, VDF (
μ
V), is set by
calculating the value stored in
DigitalFilter
EE 0x52.
Digital Filter
2250
VDF
(6)
Cell Characteristics
Battery Pack Capacity and Voltage
Pack capacity is programmed in mAh units to
Pack Ca-
pacity
in EE 0x3a–0x3b and
Last Measured Discharge
in
EE 0x38–0x39. In mAh mode, the bq2060 copies
Pack
Capacity
to DesignCapacity(). In mWh mode, the bq2060
multiplies
Pack Capacity
by
Design Voltage
EE
0x12–0x13 to calculate DesignCapacity() scaled to
10mWh.
DesignVoltage
is stored in mV.
Last Measured Discharge
is modified over the course of
pack usage to reflect cell aging under the particular use
conditions.
The bq2060 updates
Last Measured Dis-
charge
in mAh after a capacity learning cycle. The
bq2060 uses the
Last Measured Discharge
value to cal-
culate FullChargeCapacity() in mAhor 10mWh mode.
EDV Thresholds and Near Full Percentage
The bq2060 uses three pack voltage thresholds to pro-
vide voltage-based warnings of low battery capacity.
The bq2060 uses the values stored in EEPROM for the
EDV0, EDV1, and EDV2 values or calculates the three
thresholds from a base value and the temperature, ca-
pacity, and rate adjustment factors stored in EEPROM.
If EDV compensation is disabled then EDV0, EDV1, and
EDV2 are stored directly in mV in EE 0x72–0x73, EE
0x74–0x75,and EE 0x78–0x79,respectively.
For capacity correction at EDV2,
Battery Low %
EE
0x54 can be set at a desired state-of-charge,
STATEOFCHARGE%, in the range of 5 to 20%. Typical
values for STATEOFCHARGE% are 7–12% representing
7 –12%capacity.
Battery Low%
= STATEOFCHARGE%
2.56
(7)
The bq2060 updates FCC if a qualified discharge occurs
from a near-full threshold to EDV2. The desired
near-full threshold window, NFW (mAh), is programmed
in
NearFull
in EE 0x55.
Near Full
=NFW
2
(8)
EDV Discharge Rate and Temperature
Compensation
If EDV compensation is enabled, the bq2060 calculates
battery voltage to determine EDV0, EDV1, EDV2 as a
function of EDV, battery capacity, temperature, and dis-
charge load The general equation for EDV0, EDV1, and
EDV2calculation is
(9)
EDV0,1,2
=
EMF
F
BL
- |
I
LOAD
|
R0
F
TZ
F
CY
where
EMF is a no-load battery voltage that is higher than
the highest EDV threshold that is computed. EMF is
programmed in mVin
EMF/EDV1
EE 0x74–0x75.
I
LOAD
is the current discharge load.
F
BL
is the factor that adjusts the EDV voltage for bat-
tery capacity and temperature to match the no-load
characteristics ofthe battery.
F
BL
= f ( C0, C + C1, T )
(10)
where
32
bq2060
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| BQ2060SS-E207-EPG4 | 功能描述:電池管理 Multi-Chem SBS 1.1 Compliant Gas Gauge RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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