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參數(shù)資料
| 型號(hào)： | BLW80 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 62K |
| 代理商： | BLW80 |
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLW80
Fig.9
handbook, halfpage
0
1
2
0
5
MGP567
PL
(W)
PS (W)
Th = 25
°
C
70
°
C
f = 470 MHz
typical values
VCC = 12.5 V
VCC = 13.5 V
Fig.10
handbook, halfpage
0
10
5
0
150
100
50
0
Gp
(dB)
10
MGP568
5
η
(%)
PL (W)
Gp
η
f = 470 MHz
Th = 25
°
C
typical values
VCC = 12.5 V
VCC = 13.5 V
Fig.11
handbook, halfpage
PLnom
(W)
VSWR = 1
1
1.1
1.2
1.3
6
5
5.5
MGP569
VCC
VCCnom
50
6
VSWR =
10
PS
PSnom
Conditions for R.F. SOAR
f = 470 MHz
T
h
= 70
°
C
R
th mb-h
= 0,6 K/W
V
CCnom
= 12,5 V or 13,5 V
P
S
= P
Snom
at V
CCnom
and VSWR = 1 measured in the
circuit of Fig.7.
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other that the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio, with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S
/P
Snom
) increases linearly with supply over-voltage
ratio.
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參數(shù)描述 |
|---|---|
| BLW81 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW83 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW85 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW86 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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