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參數(shù)資料
| 型號： | BLW80 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 62K |
| 代理商： | BLW80 |
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLW80
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T
h
= 25
°
C
List of components:
f (MHz)
V
CE
(V)
12,5
13,5
12,5
P
L
(W)
4
4
4
P
S
(W)
<
0,63
G
p
(dB)
>
typ
typ
I
C
(A)
<
0,53
η
(%)
>
typ 65
typ 60
z
i
(
)
2,1
+
j2,3
2,0
j2,2
Y
L
(mS)
57
j56
51
j48
470
470
175
8,0
9,5
15,0
60
C1
C2
C3
C4
C5
C6
L1
L2
L3
L5
L6
L7
L1 and L6 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (
ε
r
= 2,74);
thickness 1/16".
R1
=
R2 = 10
(
±
5%) carbon resistor
Component layout and printed-circuit board for 470 MHz test circuit (Fig.8).
=
=
=
=
=
=
=
=
=
=
=
=
2,2 pF (
±
0,25 pF) ceramic capacitor
C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
5,6 pF (
±
0,25 pF) ceramic capacitor
2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
100 pF ceramic feed-through capacitor
100 nF polyester capacitor
stripline (22,5 mm
×
6,0 mm)
13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2
×
5 mm
L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
51 nH; 3,5 turns Cu wire (1 mm); int. dia. 6 mm; coil length 7 mm; leads 2
×
5 mm
stripline (10,0 mm
×
6,0 mm)
15 nH; 1 turn Cu wire (1 mm); int. dia. 5 mm; leads 2
×
5 mm
Fig.7 Class-B test circuit at f = 470 MHz.
handbook, full pagewidth
MGP565
50
50
C4
L2
C2
C1
C7
C8
L6
L7
+
VCC
L1
T.U.T.
C3
R1
L3
C5
C6
R2
L5
L4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLW81 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW83 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW85 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW86 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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