參數(shù)資料
型號: BLW80
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-122A, 4 PIN
文件頁數(shù): 2/11頁
文件大?。?/td> 62K
代理商: BLW80
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLW80
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for nominal
supply voltages up to 13,5 V.
The resistance stabilization of the
transistor provides protection against
device damage at severe load
mismatch conditions.
The transistor is housed in a
1
4
"
capstan envelope with a ceramic cap.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in an unneutralized common-emitter class-circuit.
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
η
%
z
i
Y
L
mS
c.w.
c.w.
12,5
12,5
470
175
4
4
>
typ. 15,0
8,0
>
typ. 60
60
2,1
+
j2,3
2,0
j2,2
57
j56
51
j48
PIN CONFIGURATION
Fig.1 Simplified outline. SOT122A.
handbook, halfpage
Top view
MBK187
3
1
2
4
PINNING - SOT122A.
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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