參數(shù)資料
型號(hào): BLW77
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-121B, 4 PIN
文件頁(yè)數(shù): 8/17頁(yè)
文件大小: 117K
代理商: BLW77
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
1.
Stated intermodulation distortion figures are referred
to the according level of either of the equal amplified
tones. Relative to the according peak envelope
powers these figures should be increased by 6 dB.
Fig.9
Intermodulation distortion as a function of
output power.
(1.)
V
CE
= 28 V; I
= 100 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; T
h
= 25
°
C; typical values.
handbook, halfpage
0
100
50
150
d3, d5
(dB)
60
40
MGP528
P.E.P. (W)
d5
d3
Fig.10 Double-tone efficiency and power gain as a
function of output power.
V
CE
= 28 V; I
= 100 mA; f
= 28,000 MHz;
f
2
= 28,001 MHz; T
h
= 25
°
C; typical values.
handbook, halfpage
0
50
100
150
40
η
dt
(%)
0
20
30
20
0
10
MGP529
P.E.P. (W)
η
dt
Gp
(dB)
Gp
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