- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369473 > BLW77 (NXP SEMICONDUCTORS) HF/VHF power transistor PDF資料下載
參數(shù)資料
| 型號： | BLW77 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 117K |
| 代理商： | BLW77 |
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz;); T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
70 V
35 V
4 V
12 A
30 A
245 W
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
MGP521
10
1
1
10
10
2
IC
(A)
VCE (V)
Tmb = 25
°
C
Th = 70
°
C
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3
R.F. power dissipation; V
CE
≤
28 V; f
≥
1 MHz.
handbook, halfpage
0
Prf
(W)
50
100
100
0
200
MGP522
Th (
°
C)
ΙΙΙ
ΙΙ
Ι
derate by 1.11 W/K
derate by 0.82 W/K
THERMAL RESISTANCE
(dissipation = 100 W; T
mb
= 90
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
1,03 K/W
0,71 K/W
0,2 K/W
相關PDF資料 |
PDF描述 |
|---|---|
| BLW78 | HF/VHF power transistor |
| BLW80 | UHF power transistor |
| BLX41X | PNP |
| BLX41XX | PNP |
| BLX48R | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-205AD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLW78 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW80 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW81 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW83 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW85 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。