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參數(shù)資料
| 型號： | BLW30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BLW30 |
September 1991
8
Philips Semiconductors
Product specification
VHF power transistor
BLW30
Fig.9 Component layout for 175 MHz class-B test circuit.
The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under
the emitters, to provide a direct contact between the component side and the ground plane.
handbook, full pagewidth
MGP428
72
150
C1
C2
L1
L2
L4
L5
L6
L8
L7
C4
C5
R2
C6
C7
C3b
rivet
C3a
R1
L3
+
VCC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLW31 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW31_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW32 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW33 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW33,112 | 制造商:NXP Semiconductors 功能描述: |
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