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參數(shù)資料
| 型號： | BLW30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BLW30 |
September 1991
4
Philips Semiconductors
Product specification
VHF power transistor
BLW30
CHARACTERISTICS
T
j
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter;
I
c
= 10 mA
open base;
I
c
= 25 mA
open collector;
I
E
= 2 mA
V
BE
= 0;
V
CE
= 16 V
V
CE
= 5 V;
I
C
= 4 A
V
CE
= 12.5 V;
I
E
= 4 A;
f = 500 MHz
V
CB
= 12.5 V;
I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 12.5 V;
I
C
= 0;
f = 1 MHz
f = 1 MHz
36
V
V
(BR)CEO
collector-emitter breakdown voltage
16
V
V
(BR)EBO
emitter-base breakdown voltage
3
V
I
CES
collector-emitter leakage current
10
mA
h
FE
DC current gain
25
35
f
T
transition frequency
1.6
GHz
C
c
collector capacitance
90
100
pF
C
re
feedback capacitance
60
70
pF
C
c-s
collector-stud capacitance
2
pF
Fig.3
DC current gain as a function of collector
current, typical values.
handbook, halfpage
h
MRA378
0
10
20
30
40
0
4
8
12
16
FE
IC
12.5 V
VCE=
VCE
Fig.4
Collector capacitance as a function of
collector-base voltage, typical values.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
c
C
0
50
100
150
200
0
4
8
12
16
MRA374.1
(pF)
CB
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