參數(shù)資料
型號(hào): BLW30
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-120A, 4 PIN
文件頁數(shù): 2/11頁
文件大?。?/td> 72K
代理商: BLW30
September 1991
2
Philips Semiconductors
Product specification
VHF power transistor
BLW30
FEATURES
Emitter-ballasting resistors for an
optimum temperature profile
Excellent reliability
Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead
3
8
inch
SOT120 capstan envelope with a
ceramic cap. It is designed for
common emitter, class-B operation
mobile VHF transmitters with a supply
voltage of 12.5 V. All leads are
isolated from the stud.
PINNING - SOT120
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C in a common emitter test circuit.
PIN CONFIGURATION
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
P
(dB)
η
C
(%)
c.w. class-B
175
12.5
30
>
10
>
55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
MSB056
2
3
1
4
相關(guān)PDF資料
PDF描述
BLW32 UHF linear power transistor(UHF線性功率晶體管)
BLW33 UHF Linear power transistor(UHF 線性功率晶體管)
BLW34 UHF Linear power transistor(UHF 線性功率晶體管)
BLW50F HF/VHF power transistor(HF/VHF功率 晶體管)
BLW60 VHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLW31 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
BLW31_07 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
BLW32 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
BLW33 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
BLW33,112 制造商:NXP Semiconductors 功能描述: