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參數(shù)資料
| 型號： | BLV45-12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BLV45-12 |
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
Fig.8 Load power versus source power.
Typical values; V
CE
= 12,5 V; f = 175 MHz;
T
h
= 25
°
C; R
th mb-h
= 0,2 K/W
handbook, halfpage
0
10
20
30
PL
(W)
0
40
MGP353
PS (W)
Fig.9
Power gain and efficiency versus load power.
Typical values; V
CE
= 12,5 V; f = 175 MHz;
T
h
= 25
°
C; R
th mb-h
= 0,2 K/W
handbook, halfpage
GP
(dB)
0
20
40
80
10
6
4
8
90
10
50
MGP354
60
η
C
GP
η
C
(%)
PL (W)
Ruggedness in class-B operation
The BLV45/12 is capable of withstanding a load mismatch
(VSWR = 20 through all phases) at rated load power up to
a supply voltage of 15,5 V; T
h
= 25
°
C; R
th mb-h
= 0,2 K/W.
Power slump
If T
h
is increased from 25
°
C to 70
°
C the output power
slump for constant P
S
amounts to typ. 7 %
(V
CE
= 12,5 V; f = 175 MHz; R
th mb-h
= 0,2 K/W).
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