參數(shù)資料
型號(hào): BLV45-12
廠商: NXP Semiconductors N.V.
英文描述: VHF power transistor
中文描述: 甚高頻功率晶體管
文件頁(yè)數(shù): 6/10頁(yè)
文件大小: 64K
代理商: BLV45-12
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated
by the dotted line, is unetched copper serving as a ground plane.
If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to raised al least 0,5 mm to
minimize the dielectric losses.
Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to
provide a direct contact between the copper of the component side and the ground plane.
Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit.
handbook, full pagewidth
MGP352
rivets
soldered copper
straps
ground plane
removed
Cu strap
L1
C2
L2
L4
L3
C4
C5
L5
L9
R1
L10
C12
L6
C6
L7
C7
L8
C8
C11
C1
C3
C10
+
VCC
C9
70
162
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