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參數(shù)資料
| 型號： | BLV45-12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BLV45-12 |
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
175 MHz commmunications band.
FEATURES
multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile
gold metallization ensures
excellent reliability
internal matching to achieve an
optimum wideband capability and
high power gain
The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in a common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
>
6,5
η
C
%
>
55
narrow band; c.w.
12,5
175
45
PIN CONFIGURATION
Fig.1 Simplified outlinbe, SOT119A.
handbook, halfpage
2
4
6
5
3
1
MSB006
PINNING
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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