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參數(shù)資料
| 型號： | BLV45-12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 64K |
| 代理商： | BLV45-12 |
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
peak value; f
>
1 MHz
Total power dissipation
at T
mb
= 25
°
C; f
>
1 MHz
Storage temperature
Operating junction temperature
v
CBOM
V
CEO
V
EBO
max.
max.
max.
36 V
16,5 V
4 V
I
C
I
CM
max.
max.
9 A
27 A
P
tot
T
stg
T
j
max.
90 W
65 to
+
150
°
C
max.
200
°
C
Fig.2 D.C. soar.
R
th mb-h
= 0,2 K/W.
handbook, halfpage
MGP347
IC
(A)
1
1
10
16.5
10
2
VCE (V)
Tmb = 25
°
C
Th = 70
°
C
Fig.3
Power/temperature derating curves;
R
th mb-h
= 0,2 K/W.
I
II Short-time operation during mismatch; (f
>
1 MHz)
Continuous operation (f
>
1 MHz)
handbook, halfpage
0
80
Ptot
(W)
0
200
MGP348
100
Th (
°
C)
ΙΙ
Ι
THERMAL RESISTANCE
Dissipation = 68 W; T
mb
= 25
°
C
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
R
th j
mb
R
th mb
h
=
=
1,58 K/W
0,2 K/W
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