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參數(shù)資料
| 型號： | BLV45-12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BLV45-12 |
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Collector-base breakdown voltage
open emitter; I
C
= 50 mA
Collector-emitter breakdown voltage
open base; I
C
= 100 mA
Emitter-base breakdown voltage
open collector; I
E
= 10 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
D.C. current gain
V
CE
= 10 V; I
C
= 6 A
V
(BR)CBO
>
36 V
V
(BR)CEO
>
16,5 V
V
(BR)EBO
>
4 V
I
CES
<
22 mA
E
SBR
>
12,5 mJ
>
typ.
15
55
h
FE
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 12,5 V
Collector-flange capacitance
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12,5 V
C
c
C
cf
typ.
typ.
130 pF
3 pF
C
re
typ.
80 pF
Fig.4
D.C. current gain versus collector current;
T
j
= 25
°
C.
handbook, halfpage
0
20
0
MGP349
50
hFE
10
IC (A)
VCE = 12.5 V
10 V
Fig.5
Output capacitance versus V
CB
; I
E
= i
e
= 0;
f = 1 MHz; T
j
= 25
°
C
handbook, halfpage
0
200
Cc
(pF)
0
20
MGP350
10
VCB (V)
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