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參數(shù)資料
| 型號(hào)： | BLF4G20LS-110B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | BLF4G20LS-110B |
9397 750 14548
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 12
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°
C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°
C;
f = 1990 MHz
Fig 5.
GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
Fig 6.
GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°
C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°
C;
f = 1990 MHz
Fig 7.
GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
Fig 8.
GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
P
L(AV)
(W)
0
80
60
20
40
001aac391
12
13
11
14
50
15
G
p
(dB)
η
D
(%)
10
G
p
η
D
40
30
20
10
0
P
L(AV)
(W)
0
80
60
20
40
001aac392
70
80
60
50
ACPR
(dBc)
90
ACPR
400
ACPR
600
P
L(AV)
(W)
0
80
60
20
40
001aac393
4
8
12
EVM
(%)
0
EVM
M
EVM
rms
η
D
(%)
0
50
40
20
30
10
001aac394
64
68
1
60
56
ACPR
(dBc)
EVM
(%)
72
0
2
3
4
ACPR
400
EVM
rms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G20LS-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20S-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B |
| BLF4G20S-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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