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參數(shù)資料
| 型號： | BLF4G20LS-110B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 108K |
| 代理商： | BLF4G20LS-110B |
9397 750 14548
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
2 of 12
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
1.3 Applications
I
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 1800 MHz to 2000 MHz frequency range.
2.
Pinning information
[1]
Connected to flange
3.
Ordering information
4.
Limiting values
5.
Thermal characteristics
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
Simplified outline
Symbol
[1]
3
2
1
1
3
2
sym039
Table 3:
Type number
Ordering information
Package
Name
-
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
BLF4G20LS-110B
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
DS
drain-source voltage
V
GS
gate-source voltage
I
D
drain current
T
stg
storage temperature
T
j
junction temperature
Limiting values
Conditions
Min
-
0.5
-
65
-
Max
65
+15
12
+150
200
Unit
V
V
A
°
C
°
C
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
°
C
P
L
= 40 W
P
L
= 100 W
Min
Typ
Max
Unit
-
-
0.62
0.52
0.71
0.61
K/W
K/W
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|---|---|
| BLF4G20LS-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20S-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B |
| BLF4G20S-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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