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參數(shù)資料
| 型號： | BLF4G20LS-110B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 108K |
| 代理商： | BLF4G20LS-110B |
9397 750 14548
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
4 of 12
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°
C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°
C;
f = 1990 MHz
Fig 1.
One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°
C;
f = 1990 MHz
V
DS
= 28 V; T
case
= 25
°
C; f = 1990 MHz
(1) I
Dq
= 550 mA
(2) I
Dq
= 650 mA
(3) I
Dq
= 750 mA
(4) I
Dq
= 850 mA
Fig 4.
Third order intermodulation distortion as a
function of average load power; typical values
Fig 3.
Intermodulation distortion as a function of
average load power; typical values
P
L
(W)
0
160
120
40
80
001aac387
11
20
40
60
0
13
15
G
p
(dB)
G
p
η
D
(%)
η
D
9
P
L(AV)
(W)
0
100
80
40
60
20
001aac388
12
13
11
14
15
G
p
(dB)
10
G
p
η
D
0
η
D
(%)
50
40
30
20
10
P
L(AV)
(W)
0
100
80
40
60
20
001aac389
40
60
20
0
IMD
(dBc)
IMD3
IMD5
IMD7
80
P
L(AV)
(W)
0
100
80
40
60
20
001aac390
-40
-60
-20
0
IMD3
(dBc)
-80
1
2
3
4
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G20LS-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20S-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B |
| BLF4G20S-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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