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參數(shù)資料
| 型號(hào)： | BLF348 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-262A1, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BLF348 |
October 1992
5
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
I
D
= 8 A; V
GS
= 10 V.
handbook, halfpage
0
50
100
150
150
100
50
MGP231
Tj (
°
C)
RDSon
(m
)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
20
40
500
0
1000
MGP234
30
C
(pF)
VDS (V)
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
10
20
40
200
0
400
MGP232
30
Crs
(pF)
VDS (V)
Fig.9
Intermodulation distortion as a function of
peak synchronized output power.
handbook, halfpage
dim
(dB)
50
30
10
70
55
65
70
60
MGP233
90
Po sync (W)
Th = 70
°
C
25
°
C
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