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參數(shù)資料
| 型號(hào)： | BLF348 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-262A1, 4 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | BLF348 |
October 1992
2
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor, designed for broadcast
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT262 A1 balanced flange
envelope, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
PINNING
SOT262A1
PIN
DESCRIPTION
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environment safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
k, halfpage
1
2
3
4
MSB008
Top view
5
5
MBB157
g2
g1
d2
d1
s
QUICK REFERENCE DATA
RF performance in a push-pull common source test circuit.
Note
1.
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to
peak synchronization level.
MODE OF OPERATION
f
vision
(MHz)
V
DS
(V)
I
D
(A)
T
h
(
°
C)
d
im
(dB)
(note
1
)
52
52
P
o sync
(W)
G
p
(dB)
class-A
224.25
224.25
28
28
2
×
4.6
2
×
4.6
70
25
>
67
typ. 75
>
11
typ. 13
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