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參數(shù)資料
| 型號(hào)： | BLF348 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-262A1, 4 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 83K |
| 代理商： | BLF348 |
October 1992
4
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
CHARACTERISTICS (per section)
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
5
1
4.5
100
UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS(th)
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
both transistor sections
forward transconductance
forward transconductance ratio of
both transistor sections
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 0.1 A
V
GS
= 0; V
DS
= 28 V
±
V
GS
= 20 V; V
DS
= 0
I
D
= 0.1 A; V
DS
= 10 V
I
D
= 0.1 A; V
DS
= 10 V
65
2
V
mA
μ
A
V
mV
g
fs
g
fs1
/g
fs2
I
D
= 8 A; V
DS
= 10 V
I
D
= 8 A; V
DS
= 10 V
5
0.9
7.5
1.1
S
R
DS(on)
I
DSX
C
is
C
os
C
rs
I
D
= 8 A; V
GS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
0.1
37
495
340
40
0.15
A
pF
pF
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
V
DS
= 10 V.
handbook, halfpage
T.C.
(mV/K)
5
MGP229
10
1
1
10
4
3
2
1
ID (A)
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
0
5
10
20
20
0
40
MGP230
15
ID
(A)
VGS (V)
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