參數(shù)資料
型號(hào): BGF1901-10
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: GSM1900 EDGE power module
中文描述: 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT-365C, FM-3
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 99K
代理商: BGF1901-10
2004 Oct 11
5
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
handbook, halfpage
(dB)
26.2
0
5
PL (W)
10
15
24.6
25.8
25.4
25
η
(%)
40
50
0
30
20
10
MLE253
Gp
η
Fig.6
CW gain power and efficiency as functions
of load power; typical values.
f = 1960 MHz.
handbook, halfpage
0
PL (AV) (W)
26
25.6
25.2
2
4
8
6
MLE254
Gp
(dB)
η
(%)
Gp
η
35
15
25
5
Fig.7
Two tone gain power and efficiency as
functions of load power; typical values.
f
1
= 1960 MHz; f
2
= 1960.2 MHz.
handbook, halfpage
(dBc)
0
2
d5
d7
PL (AV) (W)
4
8
70
30
6
40
50
60
MLE255
d3
Fig.8
Two tone intermodulation distortion as a
function of average load power; typical
values.
f
1
= 1960 MHz; f
2
= 1960.2 MHz.
handbook, halfpage
1.81
24
20
16
1.87
s21
s11
s11
s21
(dB)
0
10
20
30
s11
(dB)
f (GHz)
2.11
1.93
1.99
2.05
MLE256
Fig.9 s-parameters as a function of frequency.
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