參數(shù)資料
型號(hào): BGF1901-10
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: GSM1900 EDGE power module
中文描述: 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT-365C, FM-3
文件頁(yè)數(shù): 2/11頁(yè)
文件大小: 99K
代理商: BGF1901-10
2004 Oct 11
2
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
FEATURES
Typical GSM EDGE performance at a supply voltage of
26 V:
– Output power = 3.5 W
– Gain = 26.5 dB
– Efficiency = 19 %
– ACPR <
63 dBc at 400 kHz
– rms EVM < 1.2 %
– peak EVM < 3.6 %.
Low distortion to a CDMA signal
Excellent 2-tone performance
Low die temperature due to copper flange
Integrated temperature compensated bias
50
input/output system
Flat gain over frequency band.
APPLICATIONS
Base station RF power amplifiers in the
1930 to 1990 MHz frequency range
GSM, GSM EDGE, multi carrier applications
Macrocell (driver stage) and Microcell (final stage).
DESCRIPTION
10 W LDMOS power amplifier module for base station
amplifier applications in the 1930 to 1990 MHz band.
PINNING - SOT365C
PIN
DESCRIPTION
1
2
3
RF input
V
S
RF output
ground
Flange
2 3
1
Top view
MBL257
Fig.1 Simplified outline.
QUICK REFERENCE DATA
Typical RF performance at T
mb
= 25
°
C; Z
S
= Z
L
= 50
.
Note
1.
ACPR 400 kHz at 30 kHz resolution bandwidth.
MODE OF OPERATION
f
(MHz)
V
S
(V)
P
L
(W)
G
p
(dB)
η
(%)
ACPR
(dBc)
63
(1)
rms EVM
(%)
1.2
CW
GSM EDGE
1930 to 1990
1930 to 1990
26
26
10
3.5
25.5
26.5
34
19
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