參數(shù)資料
型號(hào): BGF1901-10
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: GSM1900 EDGE power module
中文描述: 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT-365C, FM-3
文件頁數(shù): 3/11頁
文件大?。?/td> 99K
代理商: BGF1901-10
2004 Oct 11
3
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
mb
= 25
°
C; V
S
= 26 V; P
L
= 6 W; f = 1930 to 1990 MHz; Z
S
= Z
L
= 50
;
unless otherwise specified.
Notes
1.
2.
G
Pi
is small signal in-band gain.
As defined by ETSI.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BGF1901-10
plastic rectangular single-ended flat package; flange mounted;
2 mounting holes; 3 in-line leads
SOT365C
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S
P
D
P
L
T
stg
T
mb
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
30
20
30
100
15
+100
+85
V
mW
W
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
CW mode
I
DQ
P
1dB
G
p
G
p(freq)
quiescent current (pin 2)
load power
power gain
gain flatness over frequency
range
gain flatness over power band
out of band gain
P
D
= 0 mW
at 1 dB gain compression
220
7
24
255
10
26.5
0.7
280
30
2
mA
W
dB
dB
G
p(pwr)
G
OB
P
L
= 50 mW up to 5 W
small signal, P
D
= 0 dBm;
1930 MHz > f > 1990 MHz
1
0
+1
G
Pi max
+ 2;
note 1
2 : 1
50
53
dB
dB
η
VSWR
in
H
2
H
3
GSM EDGE mode
(P
L
= 3.5 W average)
efficiency
input VSWR
second harmonic
third harmonic
22
25
1.4 : 1
58
59
%
dBc
dBc
SR200
SR400
EVM
rms
EVM
M
spectral regrowth; EDGE GSM
signal
200 kHz; note 2
400 kHz
37
63
1.2
3.6
32
60
2.5
8
dBc
dBc
%
%
rms EDGE signal distortion
peak EDGE signal distortion
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