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參數(shù)資料
| 型號(hào)： | BGB101 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | 0 dBm Bluetooth radio module |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PBGA28 |
| 文件頁數(shù)： | 13/17頁 |
| 文件大?。?/td> | 161K |
| 代理商： | BGB101 |
2003 Aug 05
13
Philips Semiconductors
Preliminary specification
0 dBm Bluetooth radio module
BGB101
Timing Parameters
Notes
1.
The S_EN signal going high switches the synthesiser on if preceded by S_DATA / S_CLK activity; the S_EN signal
going low disables the synthesizer in order to perform open-loop modulation or demodulation. Simultaneously, it
enables the receiver chain in RX mode. The length of the S_EN signal should be long enough for the synthesizer
loop to settle.
The DCXCTR signal in TX mode serves to switch on the TX output inside the module (see also table 6). It should go
high a sufficiently long time before the synthesizer loop is disabled ( by bringing the S_EN signal low) in order to allow
the synthesizer loop to resettle. Doing this brings about a considerable reduction in Initial Carrier Frequency
Tolerance and can give a clear improvement in link set-up time.
A single short S_EN pulse (without preceding S_DATA / S_CLK activity) serves to power-down the IC. It may be
omitted at the cost of increased power consumption. Any subsequent S_EN pulse without preceding
S_DATA / S_CLK activity toggles between power-up and power-down states, but brings the module into an
undefined power-up state. This mode should be avoided.
Because the VCO is directly modulated by the T_GFSK signal, the DC level on this pin should be present early on
during the synthesizer settling phase. Also in RX mode, there should be a well-defined and stable DC voltage on this
pin.
The DCXCTR signal (in RX mode) should go low at the actual end of the trailer sequence. The timing for this
transition should be directly derived from the Access Code detection algorithm inside the baseband processor.
2.
3.
4.
5.
REFERENCES
[1] Bluetooth test specification - RF, 20001-07-02, rev. 0.91, 20.B.353/0.91
PARAMETER
DESCRIPTION
CONDITIONS
MIN.
TYP.
2
185
60
55
2
2
2
2
20
tbd
tbd
UNIT
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
t1
t2
t3
t4
t5
t6
t7
t8
t9
t10
t11
t12
t13
t14
S_DATA last bit to REFCLK enable
S_EN falling edge to REFCLK disable
S_DATA last bit to S_EN rising edge
S_EN width
DCXCTR rising edge before S_EN falling edge
DCXCTR falling edge before S_EN falling edge
T_GFSK last bit to S_EN pulse start
R_DATA last bit to S_EN pulse start
S_EN pulse width
S_DATA last bit to T_GFSK DC bias
S_EN falling edge to T_GFSK first data bit
S_EN falling edge to R_DATA earliest data bit
S_EN falling edge to DCXCTR high
DCXCTR width (in RX mode)
0.1
0.1
180
0.1
15
note 1
note 2
note 2
note 3
note 4
note 5
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| BGB110 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Bluetooth radio module |
| BGB201 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Bluetooth System-in-a-Package radio with baseband controller |
| BGB203 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Bluetooth System-in-a-Package radio with baseband controller |
| BGB203/H1/S06,518 | 功能描述:RF片上系統(tǒng) - SoC BLUETOOTH 1.2 SIP RoHS:否 制造商:Texas Instruments 類型:Zigbee 處理器系列:CC253 核心:8051 最大數(shù)據(jù)速率:250 Kbps 輸出功率:4.5 dBm 靈敏度:- 97 dBm 工作電源電壓:2 V to 3.6 V 接收供電電流:24.3 mA 傳輸供電電流:33.5 mA 程序存儲(chǔ)器大小:256 KB 工作溫度范圍:- 40 C to + 125 C 封裝 / 箱體:QFN-40 |
| BGB203/H1/S06-T | 功能描述:RF片上系統(tǒng) - SoC BLUETOOTH 1.2 SIP RoHS:否 制造商:Texas Instruments 類型:Zigbee 處理器系列:CC253 核心:8051 最大數(shù)據(jù)速率:250 Kbps 輸出功率:4.5 dBm 靈敏度:- 97 dBm 工作電源電壓:2 V to 3.6 V 接收供電電流:24.3 mA 傳輸供電電流:33.5 mA 程序存儲(chǔ)器大小:256 KB 工作溫度范圍:- 40 C to + 125 C 封裝 / 箱體:QFN-40 |
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