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參數(shù)資料
| 型號(hào)： | BFQ270 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 6 GHz wideband transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-172A1, 4 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | BFQ270 |
September 1995
8
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
3-tone d
; (V
= 18 V);
f
p
= 445.25 MHz; V
o
= 65.11 dBmV (1.8 V);
f
q
= 453.25 MHz; V
o
= 59.11 dBmV;
f
r
= 455.25 MHz; V
= 59.11 dBmV;
f
(p+q-r)
= 443.25 MHz.
Fig.12 Intermodulation distortion as a function of
collector current.
handbook, halfpage
dim
(dB)
75
125
175
IC (mA)
275
40
60
70
50
225
MRA739
Fig.13 Intermodulation distortion as a function of
collector current.
3-tone d
; (V
= 18 V);
f
p
= 795.25 MHz; V
o
= 64.08 dBmV (1.6 V);
f
q
= 803.25 MHz; V
o
= 58.08 dBmV;
f
r
= 805.25 MHz; V
= 58.08 dBmV;
f
(p+q-r)
= 793.25 MHz.
handbook, halfpage
dim
(dB)
75
125
175
IC (mA)
275
40
60
70
50
225
MRA740
Fig.14 Second order intermodulation distortion as
a function of collector current.
V
CE
= 18 V;
f
p
= 50 MHz; V
o
= 50.5 dBmV (0.335 V);
f
q
= 400 MHz; V
o
= 50.5 dBmV;
f
(p+q)
= 450 MHz.
handbook, halfpage
(dB)
40
75
325
80
70
60
50
IC (mA)
125
175
225
275
MRA738
Fig.15 Second order intermodulation distortion as
a function of collector current.
V
CE
= 18 V;
f
p
= 250 MHz; V
o
= 50.5 dBmV (0.335 V);
f
q
= 560 MHz; V
o
= 50.5 dBmV;
f
(p+q)
= 810 MHz.
handbook, halfpage
(dB)
40
75
325
80
70
60
50
IC (mA)
125
175
225
275
MRA737
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