- 您現(xiàn)在的位置：買賣IC網 > PDF目錄375401 > BFQ270 (NXP SEMICONDUCTORS) NPN 6 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號： | BFQ270 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 6 GHz wideband transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-172A1, 4 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BFQ270 |
September 1995
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
FEATURES
High power gain
Emitter-ballasting resistors for
good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon NPN transistor mounted in a
4-lead dual-emitter SOT172A1.
envelope with a ceramic cap. All
leads are isolated from the mounting
base.
It is primarily intended for use in
MATV and CATV amplifiers.
PINNING
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT172A1.
page
1
4
2
3
MBC869
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
60
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
6
25
19
500
10
V
V
mA
W
up to T
c
= 100
°
C
I
C
= 240 mA; V
CE
= 18 V; T
j
= 25
°
C
I
C
= 240 mA; V
CE
= 18 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 240 mA; V
CE
= 18 V;
f = 800 MHz; T
amb
= 25
°
C
d
im
=
60 dB; I
C
= 240 mA;
V
CE
= 18 V; R
L
= 75
;
f
(p+q-r)
= 793.25 MHz
GHz
G
UM
maximum unilateral power gain
10
dB
V
O
output voltage
1.6
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
相關PDF資料 |
PDF描述 |
|---|---|
| BFS25 | NPN 5 GHz wideband transistor |
| BFU510 | NPN SiGe wideband transistor |
| BFU540 | NPN SiGe wideband transistor |
| BGE788 | CATV amplifier module |
| BGE883BO | RECTIFIER FAST-RECOVERY SINGLE 1.5A 50V 50A-ifsm 1V-vf 50ns 5uA-ir DO-15 5K/REEL-13 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ28 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz |
| BFQ29 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
| BFQ290 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 190V V(BR)CEO | 250MA I(C) | SOT-172A1 |
| BFQ291 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 190V V(BR)CEO | 250MA I(C) | SOT-172A1 |
| BFQ292 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 190V V(BR)CEO | 250MA I(C) | SOT-32 |
發(fā)布緊急采購，3分鐘左右您將得到回復。