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參數(shù)資料
| 型號： | BFQ270 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 6 GHz wideband transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-172A1, 4 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BFQ270 |
September 1995
4
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
List of components (see test circuit)
Note
1.
Components C4, L1, and R5 are mounted in a cavity in the brass ground plate.
The circuit is constructed on a printed circuit board and 10 mm thick brass ground plate, with a relative dielectric constant
of (
ε
r
= 2.2), thickness 1.57 mm; thickness of copper 0.017 mm (E.G. Rogers’ RT/Duroid 5880).
DESIGNATION
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1
C2, C5, C7, C8
C3
C4 (note 1)
C6
C9
L1 (note 1)
miniature ceramic plate capacitor
multilayer ceramic capacitor
multilayer ceramic chip capacitor
miniature ceramic plate capacitor
miniature ceramic plate capacitor
electrolytic capacitor
4.5 turns loosely wound 0.4 mm
enamelled copper wire
Ferroxcube choke
microstripline
0.82 pF
10 nF
2.2 pF
1 nF
1.2 pF
4.7
μ
F
≈
35 nH
2222 680 03827
2222 852 47103
2222 855 12228
2222 630 08102
2222 680 03128
2222 014 28478
internal coil diameter
2 mm
L2
ML1, ML6
5
μ
H
75
3122 108 20153
width 2.46 mm;
length 9 mm
width 2.46 mm;
length 22 mm
width 0.5 mm;
length 12 mm
type MR25
type SFR16T
type SFR16T
ML2, ML5
microstripline
75
ML3, ML4
microstripline
145
R1, R2, R3, R4
R5 (note 1)
R6
metal film resistor
metal film resistor
metal film resistor
68
240
10 k
2322 151 76819
2322 180 73241
2322 180 73103
Fig.2 Intermodulation and second order intermodulation distortion test circuit.
(1)
+
V
c
is equivalent to V
CE
= V
c
I
c
(A)
×
17.
handbook, full pagewidth
MBB488
input
n–75
R1
R2
R3
R4
Vbias
VCC
(1)
L1
R5
C4
L3
L4
L5
C5
L6
C6
C9
C8
L2
DUT
C3
L2
R6
C7
C1
C2
L1
output
n–75
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