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參數(shù)資料
| 型號： | BFQ270 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 6 GHz wideband transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-172A1, 4 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 133K |
| 代理商： | BFQ270 |
September 1995
3
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
d
im
=
60 dB (DIN 45004); I
C
= 240 mA; V
CE
= 18 V; R
L
= 75
;
V
p
= V
O
; f
p
= 795.25 MHz;
V
q
= V
O
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
r)
= 793.25 MHz.
I
C
= 240 mA; V
CE
= 18 V; R
L
= 75
;
V
p
= V
q
= V
O
= 50.5 dBmV = 335 mV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
25
19
2
500
10
150
200
V
V
V
mA
W
°
C
°
C
up to T
c
= 100
°
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-c
thermal resistance from junction to case
10 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
60
110
3.6
11
2
2.6
1.2
4.5
6
UNIT
μ
A
I
CBO
h
FE
C
c
C
e
C
re
C
cs
f
T
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
collector-stud capacitance
transition frequency
I
E
= 0; V
CB
= 18 V
I
C
= 240 mA; V
CE
= 18 V
I
E
= i
e
= 0; V
CB
= 18 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 18 V; f = 1 MHz
100
pF
pF
pF
pF
GHz
I
C
= 240 mA; V
CE
= 18 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 240 mA; V
CE
= 18 V;
f = 500 MHz; T
amb
= 25
°
C
I
C
= 240 mA; V
CE
= 18 V; f = 1 GHz;
T
amb
= 25
°
C
note 2
note 3
G
UM
maximum unilateral power gain
(note 1)
16
dB
10
dB
V
O
d
2
output voltage
second order intermodulation
distortion
1.6
50
V
dB
G
UM
10 log
S
2
1
S
11
–
1
S
22
–
--------------------------------------------------------------
dB
˙
=
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