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參數(shù)資料
| 型號： | BFG540W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFG540W/XR<SOT343N (SOT343N)|<<http://www.nxp.com/packages/SOT343N.html<1<week 52, 2002,;BFG540W<SOT343N (SOT343N)|<<http://www.nxp.com/packages/SOT343N.html<1<week |
| 文件頁數(shù)： | 4/17頁 |
| 文件大小： | 412K |
| 代理商： | BFG540W |
2000 May 23
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
2.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
; T
amb
= 25
C;
a) f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p
q)
= 898 MHz and f
(2q
p)
= 904 MHz.
d
im
=
60 dB (DIN45004B); V
p
= V
o
; V
q
= V
o
6 dB; V
r
= V
o
6 dB; R
L
= 75
; V
CE
= 8 V; I
C
= 40 mA;
a) f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
(p + q
r)
= 793.25 MHz.
I
C
= 40 mA; V
CE
= 8 V; V
o
= 275 mV; R
L
= 75
; T
amb
= 25
C;
a) f
p
= 250 MHz; f
q
= 560 MHz; measured at f
(p + q)
= 810 MHz.
3.
4.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
open emitter; I
C
= 10
A ; I
E
= 0
20
V
V
(BR)CES
R
BE
= 0; I
C
= 40
A
15
V
V
(BR)EBO
open collector; I
E
= 100
A; I
C
= 0
2.5
V
I
CBO
h
FE
f
T
open emitter; V
CB
= 8 V; I
E
= 0
I
C
= 40 mA; V
CE
= 8 V
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
s
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz
s
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz
s
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
R
L
= 50
; T
amb
= 25
C
note 2
note 3
note 4
100
120
9
50
250
nA
GHz
C
c
C
e
C
re
G
UM
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
0.9
2
0.5
16
pF
pF
pF
dB
10
dB
|s
21
|
2
insertion power gain
14
15
dB
F
noise figure
1.3
1.8
dB
1.9
2.4
dB
2.1
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
21
dBm
ITO
V
o
d
2
34
500
50
dBm
mV
dB
G
UM
10
s
1
1
s
112
–
s
222
–
-------------------------------------------------------- dB.
log
=
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| BFG540W T/R | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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| BFG540W/X,115 | 功能描述:射頻雙極小信號晶體管 NPN 8V 120mA 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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