參數(shù)資料
型號： BF547W
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： NPN 1 GHz wideband transistor(NPN 1 GHz 寬帶晶體管)
中文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SC-70, 3 PIN
文件頁數(shù)： 2/12頁
文件大小： 83K
代理商： BF547W
June 1994
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
FEATURES
Stable oscillator operation
High current gain
Good thermal stability.
APPLICATIONS
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Marking code
: E2.
Fig.1 SOT323
handbook, 2 columns
3
1
2
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the “Quick reference data” and “Limiting values”
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
open emitter
open base
40
0.8
95
1
1.2
30
20
50
300
250
1.6
V
V
mA
mW
up to T
s
= 63
°
C; note 1
I
C
= 2 mA; V
CE
= 10 V
I
C
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 500 MHz
I
C
= 1 mA; V
CE
= 10 V;
f = 100 MHz; T
amb
= 25
°
C
pF
GHz
G
UM
maximum unilateral power gain
20
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
30
20
3
50
300
+150
+150
V
V
V
mA
mW
°
C
°
C
up to T
s
= 63
°
C; note 1
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BF550 T/R 功能描述:兩極晶體管 - BJT TRANS MED FREQ TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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