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參數(shù)資料
| 型號： | BF1215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 262K |
| 代理商： | BF1215 |
BF1215_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2010
14 of 22
NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
(1) V
GG
= 5.0 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4.0 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3.0 V.
V
DS(B)
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
°
C;
R
G1
= 39 k
Ω
(connected to V
GG
); see
Figure 2
.
Fig 24. Amplifier B gate1 current as a function of
gate2 voltage; typical values
V
DS(B)
= 5 V; V
GG
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V;
R
G1
= 39 k
Ω
(connected to V
GG
); f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
°
C; see
Figure 33
.
Fig 25. Amplifier B unwanted voltage for 1 %
cross modulation as a function of gain
reduction; typical values
V
DS(B)
= 5 V; V
GG
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V;
R
G1
= 39 k
Ω
(connected to V
GG
); f = 50 MHz;
T
amb
= 25
°
C; see
Figure 33
.
Fig 26. Amplifier B gain reduction as a function of
AGC voltage; typical values
V
DS(B)
= 5 V; V
GG
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V;
R
G1
= 39 k
Ω
(connected to V
GG
); f = 50 MHz;
T
amb
= 25
°
C; see
Figure 33
.
Fig 27. Amplifier B drain current as a function of gain
reduction; typical values
V
G1-S
(V)
0
5
4
2
3
1
001aal570
50
25
75
100
I
G1
(
μ
A)
0
(1)
(2)
(3)
(4)
(5)
gain reduction (dB)
0
50
40
20
30
10
001aal571
100
90
110
120
Xmod
(dB
μ
V)
80
V
AGC
(V)
0
4
3
1
2
001aal572
30
20
40
10
0
gain
reduction
(dB)
50
gain reduction (dB)
0
50
40
20
30
10
001aal573
20
10
30
40
I
D
(mA)
0
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF1215,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1216,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-1216-10SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1216115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF-1216-24SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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