參數(shù)資料
型號(hào): BF1217WR
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: N-channel dual-gate MOSFET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 1/17頁
文件大?。?/td> 173K
代理商: BF1217WR
1. Product profile
1.1 General description
Enhancement type N-channel field-effect transistor with source and substrate
interconnected. Integrated diodes between gates and source protect against excessive
input voltage surges. The BF1217WR is encapsulated in the SOT343R plastic package.
1.2 Features and benefits
Excellent low frequency noise performance
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
digital and analog television tuners
professional communication equipment
BF1217WR
N-channel dual gate MOSFET
Rev. 2 — 20 June 2011
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
相關(guān)PDF資料
PDF描述
BF1218 Dual N-channel dual-gate MOSFET
BF1218 Dual N-channel dual-gate MOSFET
BF245A N-channel FET
BF245B N-channel FET
BF245C N-channel FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1217WR,115 功能描述:MOSFET N-CH dual gate MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BF1217WR115 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BF1218,115 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF-1218-31SV06-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF-1218-31SV-Y103 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk