- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378411 > BF1217WR (NXP SEMICONDUCTORS) N-channel dual-gate MOSFET PDF資料下載
參數(shù)資料
| 型號： | BF1217WR |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 173K |
| 代理商： | BF1217WR |
BF1217WR
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 20 June 2011
7 of 17
NXP Semiconductors
BF1217WR
N-channel dual gate MOSFET
(1) V
G2-S
= 4.0 V
(2) V
G2-S
= 3.5 V
(3) V
G2-S
= 3.0 V
(4) V
G2-S
= 2.5 V
(5) V
G2-S
= 2.0 V
(6) V
G2-S
= 1.5 V
(7) V
G2-S
= 1.0 V
V
DS
= 5 V; T
j
= 25
C.
Fig 4.
Gate1 current as a function of gate1 voltage;
typical values
(1) V
G2-S
= 4.0 V
(2) V
G2-S
= 3.5 V
(3) V
G2-S
= 3.0 V
(4) V
G2-S
= 2.5 V
(5) V
G2-S
= 2.0 V
(6) V
G2-S
= 1.5 V
(7) V
G2-S
= 1.0 V
V
DS
= 5 V; T
j
= 25
C.
Fig 5.
Forward transfer admittance as a function of
drain current; typical values
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
Drain current as a function of gate1 current;
typical values
V
DS
= 5 V; V
G2-S
= 4 V; R
G1
= 82 k
; T
j
= 25
C.
Drain current as a function of gate1 supply
voltage (V
GG
); typical values
Fig 6.
Fig 7.
V
G1-S
(V)
0
2.5
2.0
1.0
1.5
0.5
001aam156
40
60
20
80
100
I
G1
(
μ
A)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
I
D
(mA)
0
25
20
10
15
5
001aam157
10
20
30
|Y
fs
|
(mS)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
I
G1
(
μ
A)
0
60
40
20
001aam158
10
20
30
I
D
(mA)
0
V
GG
(V)
0
5
4
2
3
1
001aam159
10
20
30
I
D
(mA)
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF1218 | Dual N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
| BF245A | N-channel FET |
| BF245B | N-channel FET |
| BF245C | N-channel FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1217WR,115 | 功能描述:MOSFET N-CH dual gate MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BF1217WR115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1218,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-1218-31SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1218-31SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。