參數(shù)資料
型號： BF1214
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1214<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr
文件頁數(shù)： 6/18頁
文件大?。?/td> 211K
代理商： BF1214
BF1214_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2007
6 of 18
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
8.1 Graphs for amplifier A and B
(1) V
G2-S
= 4.0 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3.0 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2.0 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1.0 V.
V
DS
= 5 V; T
j
= 25
°
C.
(1) V
G1-S
= 1.8 V.
(2) V
G1-S
= 1.7 V.
(3) V
G1-S
= 1.6 V.
(4) V
G1-S
= 1.5 V.
(5) V
G1-S
= 1.4 V.
(6) V
G1-S
= 1.3 V.
(7) V
G1-S
= 1.2 V.
(8) V
G1-S
= 1.1 V.
(9) V
G1-S
= 1.0 V.
V
G2-S
= 4 V; T
j
= 25
°
C.
Fig 3.
Output characteristics; typical values
Fig 2.
Transfer characteristics; typical values
V
G1-S
(V)
0
2.0
1.5
0.5
1.0
001aag993
20
10
30
40
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aag994
V
DS
(V)
0
6
4
2
20
10
30
40
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
相關(guān)PDF資料
PDF描述
BF1215 Dual N-channel dual-gate MOSFET
BF1216 Dual N-channel dual-gate MOSFET
BF1217WR N-channel dual-gate MOSFET
BF1218 Dual N-channel dual-gate MOSFET
BF1218 Dual N-channel dual-gate MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1214 T/R 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1214,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1214/L,115 制造商:NXP Semiconductors 功能描述:- Tape and Reel
BF-1214-07SV-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF1215,115 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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