參數(shù)資料
型號(hào): BF1214
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1214<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr
文件頁(yè)數(shù): 18/18頁(yè)
文件大?。?/td> 211K
代理商: BF1214
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 October 2007
Document identifier: BF1214_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.2
8.2.1
8.2.2
8.3
8.3.1
8.3.2
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Graphs for amplifier A and B . . . . . . . . . . . . . . 6
Graphs for amplifier A. . . . . . . . . . . . . . . . . . . . 9
Scattering parameters for amplifier A . . . . . . . 11
Noise data for amplifier A . . . . . . . . . . . . . . . . 11
Graphs for amplifier B. . . . . . . . . . . . . . . . . . . 12
Scattering parameters for amplifier B . . . . . . . 14
Noise data for amplifier B . . . . . . . . . . . . . . . . 14
Test information. . . . . . . . . . . . . . . . . . . . . . . . 14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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BF1214 T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1214,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1214/L,115 制造商:NXP Semiconductors 功能描述:- Tape and Reel
BF-1214-07SV-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF1215,115 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel