參數(shù)資料
型號： BF1210
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁數(shù)： 4/21頁
文件大?。?/td> 252K
代理商： BF1210
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
4 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
6.
Thermal characteristics
7.
Static characteristics
[1]
R
G1
connects gate1 to V
GG
= 5 V. See
Figure 32
.
8.
Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
240
Unit
K/W
Table 7.
T
j
= 25
°
C.
Symbol
Per MOSFET; unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
Static characteristics
Parameter
Conditions
Min
Typ Max Unit
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
μ
A
amplifier A
amplifier B
V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
μ
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
μ
A
V
G2-S
= 4 V
amplifier A; V
DS(A)
= 5 V; R
G1(A)
= 59 k
amplifier B; V
DS(B)
= 5 V; R
G1(B)
= 150 k
V
G2-S
= 0 V; V
DS(A)
= V
DS(B)
= 0 V
amplifier A; V
G1-S(A)
= 5 V
amplifier B; V
G1-S(B)
= 5 V
V
G2-S
= 4 V; V
DS(A)
= V
DS(B)
= 0 V;
V
G1-S(A)
= V
G1-S(B)
= 0 V
6
6
6
6
0.5
0.5
0.3
0.4
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
V
V
V
V
V
V
V
V
V
(BR)G1-SS
V
(BR)G2-SS
V
F(S-G1)
V
F(S-G2)
V
G1-S(th)
V
G2-S(th)
I
DS
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
[1]
14
9
-
-
24
17
mA
mA
I
G1-S
gate1 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate2 cut-off current
Table 8.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS(A)
= 5 V; I
D(A)
= 19 mA.
Symbol Parameter
|
y
fs
|
forward transfer admittance
C
iss(G1)
input capacitance at gate1
C
iss(G2)
input capacitance at gate2
C
oss
output capacitance
C
rss
reverse transfer capacitance f = 100 MHz
Dynamic characteristics for amplifier A
Conditions
T
j
= 25
°
C
f = 100 MHz
f = 100 MHz
f = 100 MHz
Min
26
Typ
31
2.2
3.0
0.9
20
Max
41
2.7
-
-
-
Unit
mS
pF
pF
pF
fF
[1]
-
[1]
-
[1]
-
[1]
-
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