參數(shù)資料
型號： BF1210
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁數(shù)： 11/21頁
文件大?。?/td> 252K
代理商： BF1210
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
11 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
8.1.2
Scattering parameters for amplifier A
8.2 Noise data for amplifier A
8.3 Dynamic characteristics for amplifier B
Table 9.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA; V
DS(B)
= 0 V; V
G1-S(B)
= 0 V; T
amb
= 25
°
C; typical values.
f (MHz)
s
11
s
21
Magnitude
(ratio)
(deg)
(ratio)
40
0.9861
3.2
3.14
100
0.9883
7.84
3.14
200
0.9844
15.7
3.12
300
0.9761
23.52
3.08
400
0.9635
31.26
3.03
500
0.9486
38.78
2.97
600
0.9305
46.2
2.90
700
0.9105
53.33
2.81
800
0.8911
60.2
2.73
900
0.8723
67.03
2.65
1000
0.8521
73.74
2.56
Scattering parameters for amplifier A
s
12
Magnitude
(ratio)
0.00054
0.00104
0.00205
0.00295
0.00375
0.00437
0.00483
0.0051
0.0052
0.00515
0.00498
s
22
Magnitude
(ratio)
0.9934
0.9925
0.9918
0.9904
0.9888
0.9870
0.9847
0.9832
0.9817
0.9796
0.9785
Angle
Magnitude
Angle
(deg)
176.75
171.53
163.1
154.65
146.33
138.15
130.12
122.26
114.65
107.2
99.78
Angle
(deg)
87.97
87.69
80.77
76.33
72.34
67.97
64.86
62.13
59.88
58.8
58.03
Angle
(deg)
1.19
2.85
5.69
8.51
11.33
14.13
16.87
19.61
22.35
25.03
27.08
Table 10.
V
DS(A)
= 5 V; V
G2-S
= 4 V; I
D(A)
= 19 mA, T
amb
= 25
°
C; typical values.
f (MHz)
NF
min
(dB)
Noise data for amplifier A
Γ
opt
(ratio)
0.749
0.688
r
n
(ratio)
(deg)
23.7
48.65
400
800
0.9
1.2
0.667
0.583
Table 11.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS(B)
= 5 V; I
D(B)
= 13 mA.
Symbol Parameter
|
y
fs
|
forward transfer admittance
C
iss(G1)
input capacitance at gate1
C
iss(G2)
input capacitance at gate2
C
oss
output capacitance
C
rss
reverse transfer capacitance f = 100 MHz
G
tr
transducer power gain
Dynamic characteristics for amplifier B
Conditions
T
j
= 25
°
C
f = 100 MHz
f = 100 MHz
f = 100 MHz
Min
28
Typ
33
1.9
3.4
0.85
20
Max
43
2.4
-
-
-
Unit
mS
pF
pF
pF
fF
[1]
-
[1]
-
[1]
-
[1]
-
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
[1]
32
29
27
-
-
-
36
33
31
4
0.9
1.2
40
37
35
-
1.5
1.9
dB
dB
dB
dB
dB
dB
NF
noise figure
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