參數(shù)資料
型號(hào): BF1210
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁數(shù): 13/21頁
文件大?。?/td> 252K
代理商: BF1210
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
13 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(B)
= 5 V; T
j
= 25
°
C.
Fig 19. Amplifier B: gate1 current as a function of
gate1 voltage; typical values
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(B)
= 5 V; T
j
= 25
°
C.
Fig 20. Amplifier B: forward transfer admittance as a
function of drain current; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; T
j
= 25
°
C.
V
DS(B)
= 5 V; V
G2-S
= 4 V; R
G1(B)
= 150 k
;
T
j
= 25
°
C.
Fig 22. Amplifier B: drain voltage as a function of gate1
supply voltage (V
GG
); typical values
Fig 21. Amplifier B: drain current as a function of gate1
current; typical values
001aaf493
V
G1-S
(V)
0
2.0
1.5
0.5
1.0
80
40
120
160
I
G1
(
μ
A)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaf494
I
D
(mA)
0
48
36
12
24
24
12
36
48
Y
fs
(mS)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaf495
I
G1
(
μ
A)
0
50
40
20
30
10
8
16
24
I
D
(mA)
0
001aaf496
V
GG
(V)
0
5
4
2
3
1
8
4
12
16
I
D
(mA)
0
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