- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378411 > BF1210 (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | BF1210 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 16/21頁(yè) |
| 文件大?。?/td> | 252K |
| 代理商： | BF1210 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
16 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 13 mA.
Fig 28. Amplifier B: input admittance as a function of
frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 13 mA.
Fig 29. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 13 mA.
Fig 30. Amplifier B: reverse transfer admittance and
phase as a function of frequency; typical values
V
DS(B)
= 5 V; V
G2-S
= 4 V; V
DS(A)
= 0 V;
I
D(B)
= 13 mA.
Fig 31. Amplifier B: output admittance as a function of
frequency; typical values
001aaf502
f (MHz)
10
10
3
10
2
10
1
1
10
10
2
b
is
, g
is
(mS)
10
2
g
is
b
is
001aaf503
f (MHz)
10
10
3
10
2
10
10
2
fs
(deg)
1
10
10
2
Y
fs
(mS)
1
Y
fs
fs
001aaf504
10
2
10
10
3
rs
(deg)
1
f (MHz)
10
10
3
10
2
Y
rs
rs
10
2
10
10
3
Y
rs
(mS)
1
001aaf505
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF1211 | N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
| BF1211WR | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1210 T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1210,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-1210-05SV | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06 | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。