參數(shù)資料
型號(hào): BF1208D
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件頁(yè)數(shù): 20/22頁(yè)
文件大?。?/td> 253K
代理商: BF1208D
BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
20 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
11. Abbreviations
12. Revision history
Table 14.
Acronym
AGC
DC
MOSFET
UHF
VHF
Abbreviations
Description
Automatic Gain Control
Direct Current
Metal-Oxide Semiconductor Field-Effect Transistor
Ultra High Frequency
Very High Frequency
Table 15.
Document ID
BF1208D_1
Revision history
Release date
20070516
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
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參數(shù)描述
BF1208D T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1208D,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF120F 制造商:Eaton Corporation 功能描述:BF120F RELAY A
BF120H 制造商:Siemens 功能描述:
BF120M 制造商:Siemens 功能描述: