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參數(shù)資料
| 型號(hào)： | BF1208D |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 14/22頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | BF1208D |
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BF1208D_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 May 2007
14 of 22
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
(1) R
G1
= 47 k
.
(2) R
G1
= 56 k
.
(3) R
G1
= 68 k
.
(4) R
G1
= 82 k
.
(5) R
G1
= 86 k
.
(6) R
G1
= 100 k
.
(7) R
G1
= 120 k
.
(8) R
G1
= 150 k
.
(9) R
G1
= 180 k
.
V
G2-S
= 4 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
°
C;
R
G1
is connected to V
GG
; see
Figure 3
.
Fig 23. Amplifier B: drain current as a function of gate1
supply voltage and drain supply voltage; typical
values
(1) V
GG
= 5.0 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4.0 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3.0 V.
V
DS(B)
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
°
C;
R
G1
= 86 k
(connected to V
GG
); see
Figure 3
.
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
V
GG
= V
DS
(V)
0
5
4
2
3
1
001aag367
10
15
5
20
25
I
D
(mA)
0
(1)
(4)
(5)
(6)
(7)
(8)
(9)
(3)
(2)
V
G2-S
(V)
0
6
4
2
001aag368
8
16
24
I
D
(mA)
0
(5)
(3)
(2)
(1)
(4)
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參數(shù)描述 |
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| BF1208D T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208D,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF120F | 制造商:Eaton Corporation 功能描述:BF120F RELAY A |
| BF120H | 制造商:Siemens 功能描述: |
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