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參數(shù)資料
| 型號： | BF1206F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 5/21頁 |
| 文件大小： | 320K |
| 代理商： | BF1206F |
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
5 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
[1]
Calculated from measured S-parameters.
[2]
Measured in
Figure 32
test circuit.
8.1.1
Graphs for amplifier A
Xmod
cross modulation
input level for k = 1 %; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
[2]
88
-
92
-
85
97
-
-
-
dB
V
dB
V
dB
V
Table 8.
Common source; T
amb
= 25
C; V
G2-S
= 2.5 V; V
DS
= 2.8 V; I
D
= 4 mA.
Symbol
Parameter
Dynamic characteristics for amplifier A
…continued
Conditions
Min
Typ
Max
Unit
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(A)
= 2.8 V; T
j
= 25
C.
(1) V
G1-S(A)
= 1.4 V.
(2) V
G1-S(A)
= 1.3 V.
(3) V
G1-S(A)
= 1.2 V.
(4) V
G1-S(A)
= 1.0 V.
(5) V
G1-S(A)
= 0.9 V.
(6) V
G1-S(A)
= 0.85 V.
(7) V
G1-S(A)
= 0.8 V.
V
G2-S
= 2.5 V; T
j
= 25
C.
Fig 3.
Amplifier A: output characteristics; typical
values
Fig 2.
Amplifier A: transfer characteristics; typical
values
V
G1
S
(V)
0
2.0
1.6
0.8
1.2
0.4
001aad896
5
10
15
I
D
(mA)
0
(1)
(2)
(3)
(4)
V
DS
(V)
0
4
3
1
2
001aad897
8
4
12
16
I
D
(mA)
0
(7)
(6)
(5)
(4)
(3)
(2)
(1)
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| BF1206F,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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